NVD5C648NLT4G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 18A/89A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NVD5C648NLT4G Datasheet
-
ECAD Model
- Share
In Stock: 40,106
Can ship immediately
Pricing:
- 1$0.62386
- 2,500$0.62386
Quote It
Technical Details
- Series:Automotive, AEC-Q101
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:18A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:4.1mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id:2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.1W (Ta), 72W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET BVDSS: 31V-40V POWERDI506
- 1: $0.62524
MOSFET N-CH 40V 25A/118A 5DFN
- 1: $0.62815
- 1500: $0.62815
MOSFET P-CH 30V 50A TO252AA
- 1: $0.62832
