NP20P06YLG-E1-AY

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:47mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2407 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta), 57W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-HSON
• Package / Case:8-SMD, Flat Lead Exposed Pad