IPAN65R650CEXKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 10.1A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPAN65R650CEXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 148
Can ship immediately
Pricing:
- 1$0.67888
- 10$0.60629
- 100$0.48586
- 500$0.38398
- 1,000$0.30988
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Technical Details
- Series:CoolMOS™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:10.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:650mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
- FET Feature:Super Junction
- Power Dissipation (Max):28W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220 Full Pack
- Package / Case:TO-220-3 Full Pack
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