PSMN6R9-100YSFX

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:50.3 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):238W
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK56, Power-SO8
• Package / Case:SC-100, SOT-669