BSB104N08NP3GXUSA1

Technical Details

• Series:OptiMOS™
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:10.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 40µA

• Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 40 V
• FET Feature:-
• Power Dissipation (Max):2.8W (Ta), 42W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:MG-WDSON-2, CanPAK M™
• Package / Case:3-WDSON