TPC8062-H,LQ(CM
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 18A 8SOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPC8062-H,LQ(CM Datasheet
-
ECAD Model
- Share
In Stock: 122
Can ship immediately
Pricing:
- 1$0.879
- 3,000$0.879
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Technical Details
- Series:U-MOSVII-H
- Package:Tape & Reel (TR)
- Part Status:Last Time Buy
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:5.8mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOP
- Package / Case:8-SOIC (0.173", 4.40mm Width)
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