In Stock: 130

Can ship immediately

Pricing:
  • 1$0.91074
  • 1,000$0.91074

Quote It

Technical Details

  • Series:aMOS™
  • Package:Tube
  • Part Status:Not For New Designs
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:650mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:434 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):35W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3F
  • Package / Case:TO-220-3 Full Pack

Related Products


BUK7Y1R4-40HX

BUK7Y1R4-40H/SOT669/LFPAK

  • 1: $0.91094
  • 1500: $0.91094

NTMFS4H01NT3G

MOSFET N-CH 25V 54A/334A 5DFN

NTMFS4H01NT3G Datasheet
  • 1: $0.91176
  • 5000: $0.91176

2SK3482-AZ

MOSFET N-CH 100V 36A TO251

2SK3482-AZ Datasheet
  • 1: $0.91182
  • 1850: $0.91182

SIR846ADP-T1-RE3

MOSFET N-CH 100V 60A PPAK SO-8

  • 1: $0.91200
  • 3000: $0.91200

BUK9Y1R3-40HX

BUK9Y1R3-40H/SOT669/LFPAK

  • 1: $0.91397
  • 1500: $0.91397

SI7742DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

SI7742DP-T1-GE3 Datasheet
  • 1: $0.89243
  • 3000: $0.89243

SIR402DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

SIR402DP-T1-GE3 Datasheet
  • 1: $0.89243
  • 3000: $0.89243
  • 6000: $0.86146

IPB80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO263-3

IPB80P03P4L07ATMA1 Datasheet
  • 1: $0.91542
  • 1000: $0.87094

AOB256L

MOSFET N-CH 150V 3A/19A TO263

AOB256L Datasheet
  • 1: $0.91543
  • 800: $0.91543

AOT412

MOSFET N-CH 100V 8.2A/60A TO220

AOT412 Datasheet
  • 1: $0.91872
  • 1000: $0.91872

Top