SI4413DDY-T1-GE3

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):-
• Current - Continuous Drain (Id) @ 25°C:-
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:5.5mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:1.6V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:4780 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-55°C ~ 125°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC
• Package / Case:8-SOIC (0.154", 3.90mm Width)