NTMJS0D9N04CTWG

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:52A (Ta), 342A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:810µOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
• Vgs (Max):20V
• Input Capacitance (Ciss) (Max) @ Vds:7400 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):4.2W (Ta), 180W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-LFPAK
• Package / Case:SOT-1205, 8-LFPAK56