SI6413DQ-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:10mOhm @ 8.8A, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 400µA

• Gate Charge (Qg) (Max) @ Vgs:105 nC @ 5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):1.05W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-TSSOP
• Package / Case:8-TSSOP (0.173", 4.40mm Width)