SI7104DN-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:3.7mOhm @ 26.1A, 4.5V
• Vgs(th) (Max) @ Id:1.8V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):3.8W (Ta), 52W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 1212-8
• Package / Case:PowerPAK® 1212-8