NP75N04YUK-E1-AY

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:3.3mOhm @ 38A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta), 138W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-HSON
• Package / Case:8-SMD, Flat Lead Exposed Pad