BSB012NE2LXIXUMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 170A 2WDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSB012NE2LXIXUMA1 Datasheet
-
ECAD Model
- Share
In Stock: 108
Can ship immediately
Pricing:
- 1$1.20312
- 5,000$1.18653
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5852 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 57W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:MG-WDSON-2, CanPAK M™
- Package / Case:3-WDSON
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