BSC019N02KSGAUMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 30A/100A TDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC019N02KSGAUMA1 Datasheet
-
ECAD Model
- Share
In Stock: 105
Can ship immediately
Pricing:
- 1$1.21958
- 5,000$1.20277
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:1.95mOhm @ 50A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs:85 nC @ 4.5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:13000 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 104W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-1
- Package / Case:8-PowerTDFN
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