TK18E10K3,S1X(S
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 18A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK18E10K3,S1X(S Datasheet
-
ECAD Model
- Share
In Stock: 127
Can ship immediately
Pricing:
- 1$1.3028
- 50$1.3028
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Technical Details
- Series:U-MOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:42mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
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