TK14G65W5,RQ
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 13.7A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK14G65W5,RQ Datasheet
-
ECAD Model
- Share
In Stock: 142
Can ship immediately
Pricing:
- 1$1.33
- 1,000$1.33
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Technical Details
- Series:DTMOSIV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:300mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):130W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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