TK10V60W,LVQ
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 9.7A 4DFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK10V60W,LVQ Datasheet
-
ECAD Model
- Share
In Stock: 158
Can ship immediately
Pricing:
- 1$1.485
- 2,500$1.485
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Technical Details
- Series:DTMOSIV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:380mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
- FET Feature:Super Junction
- Power Dissipation (Max):88.3W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-DFN-EP (8x8)
- Package / Case:4-VSFN Exposed Pad
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