IRF3610STRLPBF

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:103A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:11.6mOhm @ 62A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:5380 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB