TK9A65W,S5X

Technical Details

• Series:DTMOSIV
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:9.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:500mOhm @ 4.6A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 350µA

• Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
• FET Feature:-
• Power Dissipation (Max):30W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220SIS
• Package / Case:TO-220-3 Full Pack