TK8Q60W,S1VQ

Technical Details

• Series:DTMOSIV
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:500mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id:3.7V @ 400µA

• Gate Charge (Qg) (Max) @ Vgs:18.5 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 300 V
• FET Feature:Super Junction
• Power Dissipation (Max):80W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:I-PAK
• Package / Case:TO-251-3 Stub Leads, IPak