R8010ANX
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 10A TO220FM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet R8010ANX Datasheet
-
ECAD Model
- Share
In Stock: 187
Can ship immediately
Pricing:
- 1$2.08164
- 10$1.87003
- 100$1.53228
- 500$1.3044
- 1,000$1.1001
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:560mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):40W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220FM
- Package / Case:TO-220-3 Full Pack
Related Products
MOSFET N-CH 150V 42A TO263
- 1: $2.08401
MOSFET N-CH 600V 10A D2-PAK
- 1: $2.08895
MOSFET N-CH 500V 12A TO263
- 1: $2.08895
MOSFET N-CH 500V 3A TO263
- 1: $2.08895
MOSFET N-CH 1200V 1A TO252
- 1: $2.09010
