STI21N65M5

STMicroelectronics
In Stock: 163

Can ship immediately

Pricing:
  • 1$2.17
  • 50$1.74339
  • 100$1.58841
  • 500$1.28623
  • 1,000$1.08477
  • 2,500$1.03053
  • 5,000$0.9918

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Technical Details

  • Series:MDmesh™ V
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:179mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:I2PAK
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA

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