AOW25S65
Alpha and Omega Semiconductor, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 25A TO262
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet AOW25S65 Datasheet
-
ECAD Model
- Share
In Stock: 165
Can ship immediately
Pricing:
- 1$2.25302
- 1,000$2.25302
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Technical Details
- Series:aMOS™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:190mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:26.4 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1278 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):357W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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