TK16E60W,S1VX

Technical Details

• Series:DTMOSIV
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:15.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:190mOhm @ 7.9A, 10V
• Vgs(th) (Max) @ Id:3.7V @ 790µA

• Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 300 V
• FET Feature:Super Junction
• Power Dissipation (Max):130W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220
• Package / Case:TO-220-3