TK25V60X,LQ

Technical Details

• Series:DTMOSIV-H
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:135mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 1.2mA

• Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 300 V
• FET Feature:-
• Power Dissipation (Max):180W (Tc)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:4-DFN-EP (8x8)
• Package / Case:4-VSFN Exposed Pad