TK10A80W,S4X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 9.5A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK10A80W,S4X Datasheet
-
ECAD Model
- Share
In Stock: 172
Can ship immediately
Pricing:
- 1$2.5244
- 50$2.0257
- 100$1.84564
- 500$1.49451
- 1,000$1.26044
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Technical Details
- Series:DTMOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:550mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:4V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):40W (Tc)
- Operating Temperature:150°C
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
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