TK17E65W,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 17.3A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK17E65W,S1X Datasheet
-
ECAD Model
- Share
In Stock: 164
Can ship immediately
Pricing:
- 1$2.5938
- 50$2.08545
- 100$1.9
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Technical Details
- Series:DTMOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:17.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:200mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):165W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
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