TK10J80E,S1E
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 10A TO3P
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK10J80E,S1E Datasheet
-
ECAD Model
- Share
In Stock: 155
Can ship immediately
Pricing:
- 1$2.7348
- 25$2.7348
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Technical Details
- Series:π-MOSVIII
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-3P(N)
- Package / Case:TO-3P-3, SC-65-3
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