STB11NM60FDT4
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 11A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STB11NM60FDT4 Datasheet
-
ECAD Model
- Share
In Stock: 120
Can ship immediately
Pricing:
- 1$3.57
- 1,000$3.08805
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Technical Details
- Series:FDmesh™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):160W (Tc)
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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