SIHH28N60E-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 29A PPAK 8 X 8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHH28N60E-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 140
Can ship immediately
Pricing:
- 1$3.441
- 10$3.07062
- 100$2.51772
- 500$2.03873
- 1,000$1.71941
- 2,500$1.63344
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Technical Details
- Series:E
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:98mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:129 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2614 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):202W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 8 x 8
- Package / Case:8-PowerTDFN
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