IPI041N12N3GAKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 120V 120A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI041N12N3GAKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 145
Can ship immediately
Pricing:
- 1$3.44574
- 500$3.44574
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Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):120 V
- Current - Continuous Drain (Id) @ 25°C:120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:211 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:13800 pF @ 60 V
- FET Feature:-
- Power Dissipation (Max):300W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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