TK35N65W5,S1F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 35A TO247
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK35N65W5,S1F Datasheet
-
ECAD Model
- Share
In Stock: 125
Can ship immediately
Pricing:
- 1$7.45267
- 30$7.45267
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Technical Details
- Series:DTMOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:95mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 2.1mA
- Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):270W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247
- Package / Case:TO-247-3
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