IXTT11P50

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:750mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4700 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):300W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-268
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA