IXFH60N65X2-4

Technical Details

• Series:HiPerFET™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:5V @ 4mA

• Gate Charge (Qg) (Max) @ Vgs:108 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:6300 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):780W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4L
• Package / Case:TO-247-4