In Stock: 124

Can ship immediately

Pricing:
  • 1$176.32
  • 10$167.80969
  • 25$161.72937

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Technical Details

  • Series:HiPerFET™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:690A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.8mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:6V @ 130mA

 

  • Gate Charge (Qg) (Max) @ Vgs:2300 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:59000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2500W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Supplier Device Package:Y3-DCB
  • Package / Case:Y3-DCB

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