GA50JT06-258
GeneSiC Semiconductor- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS SJT 600V 100A TO258
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet GA50JT06-258 Datasheet
-
ECAD Model
- Share
In Stock: 181
Can ship immediately
Pricing:
- 1$669.9
- 10$669.9
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:-
- Technology:SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:25mOhm @ 50A
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):769W (Tc)
- Operating Temperature:-55°C ~ 225°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-258
- Package / Case:TO-258-3, TO-258AA
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