IRFH8337TRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 12A/35A PQFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFH8337TRPBF Datasheet
-
ECAD Model
- Share
In Stock: 131
Can ship immediately
Pricing:
- 1$0.23
- 4,000$0.23
- 8,000$0.21583
- 12,000$0.20874
- 28,000$0.20487
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:12A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:12.8mOhm @ 16.2A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):3.2W (Ta), 27W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PQFN (5x6)
- Package / Case:8-PowerTDFN
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