IPS65R1K4C6

Technical Details

• Series:CoolMOS™ C6
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 100µA

• Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):28W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO251-3
• Package / Case:TO-251-3 Stub Leads, IPak