IPP80N06S209AKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 80A TO220-3-1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP80N06S209AKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 195
Can ship immediately
Pricing:
- 1$0.53
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:9.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:4V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2.36 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):190W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3-1
- Package / Case:TO-220-3
Related Products
BSC019N04 - 12V-300V N-CHANNEL P
- 1: $0.54413
MOSFET N-CH 60V 90A TO220-3
- 1: $0.55000
3A, 400V, 1.5OHM, N-CHANNEL POWE
- 1: $0.56000
IPP80R900 - 800V COOLMOS N-CHANN
- 1: $0.56000
MOSFET N-CH 800V 4A TO220-3
- 1: $0.62000