IPW60R190P6

Technical Details

• Series:CoolMOS™ P6
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:190mOhm @ 7.6A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 630µA

• Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):151W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO247
• Package / Case:TO-247-3