BMS3003-1E
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionBUFFER/INVERTER BASED MOSFET DRI
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BMS3003-1E Datasheet
-
ECAD Model
- Share
In Stock: 112
Can ship immediately
Pricing:
- 1$2.05
- 50$1.64655
- 100$1.50018
- 500$1.21479
- 1,000$1.02452
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:78A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:6.5mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:285 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:13.2 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta), 40W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220F-3SG
- Package / Case:TO-220-3 Full Pack
Related Products
21A, 600V, 0.165OHM, N-CHANNEL M
- 1: $2.06000
POWER FIELD-EFFECT TRANSISTOR
- 1: $2.08000
POWER FIELD-EFFECT TRANSISTOR, N
- 1: $2.59000
MOSFET N-CH 600V 22A TO247
- 1: $2.76000
POWER FIELD-EFFECT TRANSISTOR, 2
- 1: $2.82000
MOSFET N-CH 650V 24A TO247
- 1: $2.91000
MOSFET N-CH 250V 61A TO220-3
- 1: $3.02000