In Stock: 135

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:26mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:140 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):63W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB Full-Pak
  • Package / Case:TO-220-3 Full Pack

Related Products


EPC2001

GANFET N-CH 100V 25A DIE OUTLINE

EPC2001 Datasheet

Call for price


EPC2007

GANFET N-CH 100V 6A DIE OUTLINE

EPC2007 Datasheet

Call for price


EPC2010

GANFET N-CH 200V 12A DIE

EPC2010 Datasheet

Call for price


EPC2012

GANFET N-CH 200V 3A DIE

EPC2012 Datasheet

Call for price


EPC2014

GANFET N-CH 40V 10A DIE OUTLINE

EPC2014 Datasheet

Call for price


EPC2015

GANFET N-CH 40V 33A DIE OUTLINE

EPC2015 Datasheet

Call for price


EPC2016

GANFET N-CH 100V 11A DIE

EPC2016 Datasheet

Call for price


GA08JT17-247

TRANS SJT 1700V 8A TO247AB

GA08JT17-247 Datasheet
  • 1: $52.14000
  • 10: $49.07669
  • 30: $46.00958

2N7002E-T1-E3

MOSFET N-CH 60V 240MA SOT23-3

2N7002E-T1-E3 Datasheet

Call for price


EPC2018

GANFET N-CH 150V 12A DIE

EPC2018 Datasheet

Call for price


Top