PHK28NQ03LT,518

NXP Semiconductors
In Stock: 126

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Technical Details

  • Series:TrenchMOS™
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:23.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:30.3 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):6.25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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