IRLMS1902TR
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 3.2A MICRO6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLMS1902TR Datasheet
-
ECAD Model
- Share
In Stock: 116
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:100mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id:700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):1.7W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:Micro6™(TSOP-6)
- Package / Case:SOT-23-6
