IRFSL59N10D

Technical Details

• Series:HEXFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:25mOhm @ 35.4A, 10V
• Vgs(th) (Max) @ Id:5.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:2450 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.8W (Ta), 200W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-262
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA