IRF5802

Technical Details

• Series:HEXFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):150 V
• Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.2Ohm @ 540mA, 10V
• Vgs(th) (Max) @ Id:5.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:88 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2W (Ta)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:Micro6™(TSOP-6)
• Package / Case:SOT-23-6 Thin, TSOT-23-6