RFD10P03LSM
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 10A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RFD10P03LSM Datasheet
-
ECAD Model
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:200mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:1035 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):-
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
