MTD10N10ELT4
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 10A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet MTD10N10ELT4 Datasheet
-
ECAD Model
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V
- Rds On (Max) @ Id, Vgs:220mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
- Vgs (Max):±15V
- Input Capacitance (Ciss) (Max) @ Vds:1040 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.75W (Ta), 40W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
