STS2DPFS20V

Technical Details

• Series:STripFET™ II
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
• Rds On (Max) @ Id, Vgs:200mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id:600mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 15 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):2W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SO
• Package / Case:8-SOIC (0.154", 3.90mm Width)