NTMS4101PR2
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 6.9A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTMS4101PR2 Datasheet
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ECAD Model
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In Stock: 176
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:19mOhm @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id:450mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:32 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1.38W (Tj)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOIC
- Package / Case:8-SOIC (0.154", 3.90mm Width)
